U.S. Patent 8148779 was awarded to Samsung Mobile Display Co., Ltd. on 2012-04-03 and describes a “Thin film transistor, method of manufacturing the same and flat panel display device having the same.” This patent has been cited 339 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. Link: U.S. Patent 8148779

This patent was originally filed on 2009-01-13 which gives it a processing time of 1176 days, compared to an average processing time of 1063 in the field. Samsung Mobile Display Co., Ltd. has 1224 total patents. The first named inventor is Taek Hang Ahn of Seongnam-si, Gyeonggi-do. The assistant examiner was Cathy N Lam.

Select Patents monitors top semiconductors patents and electrical engineering patents which have been allowed and granted worldwide. If you would like legal advice regarding a patent or would like to file a patent go to https://selectpatents.wpengine.com/contact/