U.S. Patent 8058645 was awarded to Samsung Mobile Display Co., Ltd. on 2011-11-15 and describes a “Thin film transistor, display device, including the same, and associated methods.” This patent has been cited 274 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer. Link: U.S. Patent 8058645

This patent was originally filed on 2009-04-01 which gives it a processing time of 958 days, compared to an average processing time of 1063 in the field. Samsung Mobile Display Co., Ltd. has 1224 total patents. The first named inventor is Yeon-Gon Gon Mo of Yongin-si, Gyeonggi-do. The assistant examiner was Wensing Kuo.

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