U.S. Patent 8203143 was awarded to FUJIFILM Corporation on 2012-06-19 and describes a “Thin film field effect transistor.” This patent has been cited 335 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5–1 and a drain electrode 5–2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer. Link: U.S. Patent 8203143

This patent was originally filed on 2009-08-11 which gives it a processing time of 1043 days, compared to an average processing time of 1063 in the field. FUJIFILM Corporation has 9795 total patents. The first named inventor is Shinji Imai of Tokyo, Tokyo. The primary examiner was Evan Pert.

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