U.S. Patent 8188480 was awarded to FUJIFILM Corporation on 2012-05-29 and describes a “Thin film field effect transistor and display.” This patent has been cited 334 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode and a drain electrode, wherein a resistance layer containing an amorphous oxide and having a thickness of more than 3 nm is disposed between the active layer and at least one of the source electrode or the drain electrode, and a band gap of the active layer is smaller than a band gap of the resistance layer. Also, a display using the TFT is provided. Link: U.S. Patent 8188480

This patent was originally filed on 2009-03-04 which gives it a processing time of 1182 days, compared to an average processing time of 1063 in the field. FUJIFILM Corporation has 9795 total patents. The first named inventor is Yuichiro Itai of , Kanagawa Prefecture. The assistant examiner was Jamie C Niesz.

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