U.S. Patent 7910490 was awarded to Semiconductor Energy Laboratory Co., Ltd. on 2011-03-22 and describes a “Semiconductor device and manufacturing method thereof.” This patent has been cited 360 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. Link: U.S. Patent 7910490

This patent was originally filed on 2009-04-29 which gives it a processing time of 692 days, compared to an average processing time of 940 in the field. Semiconductor Energy Laboratory Co., Ltd. has 12178 total patents. The first named inventor is Tatsuya Honda of Isehara, Kanagawa. The primary examiner was Caridad M Everhart.

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