U.S. Patent 8202365 was awarded to FUJIFILM Corporation on 2012-06-19 and describes a “Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film.” This patent has been cited 335 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei. Link: U.S. Patent 8202365

This patent was originally filed on 2008-12-17 which gives it a processing time of 1280 days, compared to an average processing time of 1462 in the field. FUJIFILM Corporation has 9795 total patents. The first named inventor is Hiroyuki Hirai of Kanagawa, Fukushima. The primary examiner was Mark Kopec.

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