U.S. Patent 7791074 was awarded to Canon Kabushiki Kaisha on 2010-09-07 and describes a “Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film.” This patent has been cited 336 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled. Link: U.S. Patent 7791074

This patent was originally filed on 2006-09-05 which gives it a processing time of 1463 days, compared to an average processing time of 1283 in the field. Canon Kabushiki Kaisha has 66982 total patents. The first named inventor is Tatsuya Iwasaki of , Kanagawa Prefecture. The primary examiner was Dao H Nguyen.

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